Resputtering , also called Biased Sputtering, involves re-emission of material, e.g., SiO2, deposited by sputtering during the deposition. Similar to sputtering, the re-emission is caused by ion bombardment of the deposited material. The resputtering technique was first published by L.I. Maissel et al. in the Journal of Applied Physics (Jan. 1965, p. 237). Sputtering and Resputtering are used extensively in the semiconductor industry to deposit thin films of various materials in integrated circuit and ceramic PCB processing.
